This paper reports a fabrication approach for very high aspect ratio through silicon vias (TSVs). The metal filling of the through via holes is implemented by adapting standard wire bonding technology. TSVs with a diameter of 30 μm and aspect ratios between 10:1 and 20:1 have been fabricated. Basic electrical characterization and optical inspection have been conducted to verify the resistance and integrity of the metal and insulator filling of the TSV.
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